Chinese translation for "epitaxial silicon"

外延硅

Related Translations:

epitaxial:  晶膜取向附生的，外延的外延的

epitaxial slice:  外延片外延生长薄片

epitaxial crystallization:  外延结晶，附生结晶

epitaxial nucleation:  外延成核作用

epitaxial bath:  外延槽

epitaxial regrowth:  外延层再生长

epitaxial cvd:  外延化学汽相淀积

epitaxial diode:  外延二极管

epitaxial overgrowth:  异轴增生

epitaxial solution:  外延溶液

Example Sentences:

	1.	Luminescent properties of c implanted epitaxial silicon 外延硅的光致发光特性
	2.	In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy 本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。
	3.	Many factors which affect the epitaxy qualities , especially the porosity of porous silicon and growth temperature , have been studied in detail . it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy . the defaults along { 111 } are the main defects in epitaxial silicon layer 深入研究了影响外延的各种因素，特别是多孔硅的孔隙率和外延温度对外延层质量的影响，发现多孔硅的预氧化可以有效地阻止外延时b的扩散，外延层中主要的缺陷是沿着{ 111 }面生长的层错。

Similar Words：

"epitaxial process" Chinese translation, "epitaxial reactor" Chinese translation, "epitaxial region" Chinese translation, "epitaxial regrowth" Chinese translation, "epitaxial semiconductor laser" Chinese translation, "epitaxial silicon controlled rectifier" Chinese translation, "epitaxial slice" Chinese translation, "epitaxial solidification" Chinese translation, "epitaxial solution" Chinese translation, "epitaxial spike" Chinese translation